Transistor 2N3055 Circuit with 1.5 Million High Gain

The 2N3055 transistor is like a normal volume knob, it can only turn things up so loud.

To get super loud like 1.5 million you need to trick it.

One way is to use two transistors together like a double volume knob darlington pair.

You can even stack more of these double knobs for even more volume!

But getting that loud is very hard.

You should need very special parts and careful planning just like setting up a giant concert sound system.

There are other things to worry about too, like how wide the sound range is and if it stays stable.

Circuit Working:

Parts List:

At times we require a transistor with characteristics different from the standard ones such as maximum voltage and current ratings for the collector, maximum power dissipation and amplification.

This can be achieved by utilizing a combination of complementary transistors configured to function as a single NPN transistor.

In the provided circuits we employ four transistors for the NPN version of the high gain transistor version.

By carefully selecting the values for R1, R3 and R4 the total current amplification can reach around 1.5 million.

The circuits characteristics are essentially similar to those of the 2N3055 transistor.

At a temperature of 25°C, the maximum power dissipation can reach up to 115 W while the maximum collector voltage and current are 60V and 15A, respectively.

Formulas:

As per the above diagram let us calculate estimated voltage gain for followers in a cascade for the perfect emitter follower:

The total voltage gain of three or more emitter follower (common collector) BJTs cascaded together
A total can be described in terms of the input and output resistances of the entire network as well as the individual gains Av1, Av2, and Av3… of each stage.

This formula takes into account the properties of voltage gain and impedance:

Voltage Gain A_v

Under ideal circumstances, each stage of an emitter follower usually has a voltage gain near to 1 (unity gain).

As a result, the voltage gain Av of each stage may be roughly expressed as follows:

A_v​ = 1

Input Resistance R_in

Under perfect circumstances, the input resistance of a single emitter follower stage is about equal to the emitter resistor R_E.

The input resistance R_in the cascade for numerous stages may be roughly expressed as follows:

Ri_n​ = R_E1​

where,

• where R_E1 is the emitter resistor of the first stage.

A_total overall voltage gain

The total number of emitter follower BJTs in a cascaded configuration is usually fewer than one because of defects at each stage and loading effects.

On the other hand, the overall voltage gain may be approximately approximated as follows under ideal circumstances when loading effects are minimal and assuming each stage has a unity gain (which is a typical approximation):

A_total​ = A_v1 ​× A_v2​ × A_v3 ​× …

where,

• A_v=1 for each stage:
• A_total​ = 1

Remember:

A thorough study taking into account each of the aforementioned parameters would be necessary for the precise voltage gain calculation including numerous stages, and this may be somewhat difficult.

An accurate estimate may be obtained for the majority of applications by assuming a voltage gain of one for each stage.

How to Build:

To build a Transistor 2N3055 Circuit with 1.5 Million High Gain you need to follow the following steps:

NPN Version:

• Connect the emitter of T1 transistor to ground through resistor R2 and collector to base of T2 through resistor R1 and base of T1 remain open for the signal input.
• Connect the emitter of T4 transistor to ground; and collector to main power supply and base trough R4 resistor to ground and to collector of T3.
• Connect the emitter of T2 transistor to power supply through resistor R3 and collector to the base of T4 and base to the collector of T1
• Connect emitter of T3 transistor to power supply and the collector to the ground through resistor R4 and base to the emitter of transistor T2.

Output Connection:

• Connect the common point of the load resistors R3 to the load.
• Connect the other side of the load to the positive supply voltage.

Adjustment:

• Adjust the values of resistors R1, R3 and R4 to achieve the desired current amplification and other characteristics.

Testing:

• Apply a signal to the input and observe the output.
• Ensure that the transistors do not exceed their maximum ratings for voltage, current and power dissipation.

Important Notes:

• Use heat sinks for the transistors if operating at high power levels to prevent overheating.
• Be cautious with the input signal to avoid damaging the transistors.
• Test the circuit with lower voltages and currents before applying full power.
• Use appropriate safety measures when working with electricity.

Conclusion:

To conclude, achieving a high gain of 1.5 million with discrete transistors like the 2N3055 would require complex circuitry possibly using configurations like darlington pairs.

Careful design and component matching would be necessary to ensure the circuits performance and stability.

References:

Datasheet 2N3055